Double heterostructure lasers: early days and future perspectives
暂无分享,去创建一个
[1] Mikhail V. Maximov,et al. Low threshold, large To injection laser emission from (InGa)As quantum dots , 1994 .
[2] P. D. Dapkus,et al. Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition , 1977 .
[3] W. Wiegmann,et al. Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures , 1975 .
[4] H. Kogelnik,et al. STIMULATED EMISSION IN A PERIODIC STRUCTURE , 1971 .
[5] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .
[6] Levon V. Asryan,et al. Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser , 1996 .
[7] J. Faist,et al. Quantum Cascade Laser , 1994, Science.
[8] Diana L. Huffaker,et al. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser , 1999 .
[9] Joseph P. Donnelly,et al. Room-Temperature Operation of GaInAsp/Inp Double-Heterostructure Diode Lasers Emitting at 1.1 µm* , 1976, Integrated Optics.
[10] A. Ekimov,et al. Quantum Size Effect in Three-Dimensional Microscopic Semiconductor Crystals , 1981, JETP Letters.
[11] Nikolai N. Ledentsov,et al. An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix , 1996 .
[12] L. Goldstein,et al. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices , 1985 .
[13] Jerry M. Woodall,et al. EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY , 1967 .
[14] V. M. Andreev,et al. Solar-energy converters based on p-n AlxGal-x As-GaAs heterojunctions , 1971 .
[15] W. Wiegmann,et al. Quantum States of Confined Carriers in Very Thin AlxGa1-x As-GaAs-AlxGa1-xAs Heterostructures , 1974 .
[16] W. Hitchens,et al. IIA-4 Low threshold LPE In1-x',Gax',P1-z',Asz',/In1-xGaxP1-zAsz/In1-x',Gax,P1-z',Asz', yellow double heterojunction laser diodes (J < 104A/cm2, λ ≈ 5850 Å, 77°K) , 1975 .
[17] Nikolai N. Ledentsov,et al. 3.9 W CW power from sub-monolayer quantum dot diode laser , 1999 .
[18] P. D. Dapkus,et al. Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition , 1977 .
[19] Herbert Kroemer,et al. Theory of a Wide-Gap Emitter for Transistors , 1957, Proceedings of the IRE.
[20] Harold M. Manasevit,et al. Single-crystal gallium arsenide on insulating substrates , 1968 .
[21] N. Ledentsov,et al. Spontaneous ordering of arrays of coherent strained islands. , 1995, Physical review letters.
[22] Won-Tien Tsang,et al. Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy , 1982 .
[23] V. I. Sidorov,et al. Sov Phys Semicond , 1975 .
[24] Carlo Sirtori,et al. Quantum Cascade Laser , 1994, Science.
[25] D. Deppe,et al. Low-threshold oxide-confined 1.3-μm quantum-dot laser , 2000, IEEE Photonics Technology Letters.
[26] James A. Lott,et al. Vertical cavity lasers based on vertically coupled quantum dots , 1997 .
[27] I. Hayashi,et al. JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE , 1970 .
[28] I. Hayashi,et al. Heterostructure lasers , 1984, IEEE Transactions on Electron Devices.
[29] P. D. Dapkus,et al. Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition , 1978 .
[30] Z. Alferov. AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold , 1969 .
[31] Mikhail V. Maximov,et al. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm , 2000 .
[32] Nikolai N. Ledentsov,et al. Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser , 1997 .
[33] A. Y. Cho,et al. Film Deposition by Molecular-Beam Techniques , 1971 .