An energy‐transport model for semiconductor heterostructure devices: application to AlGaAs/GaAs MODFETs
暂无分享,去创建一个
[1] Carlo Cercignani,et al. Mathematical Methods in Kinetic Theory , 1970 .
[2] Franco Brezzi,et al. Numerical simulation of semiconductor devices , 1989 .
[3] S. Selberherr. Analysis and simulation of semiconductor devices , 1984 .
[4] C. Schmeiser,et al. Semiconductor equations , 1990 .
[5] Numerical analysis of nonequilibrium electron transport in AlGaAs/InGaAs/GaAs pseudomorphic MODFETs , 1990 .
[6] Shyh Wang,et al. Fundamentals of semiconductor theory and device physics , 1989 .
[7] Roberto Guerrieri,et al. A new discretization strategy of the semiconductor equations comprising momentum and energy balance , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[8] G. Baccarani,et al. An investigation of steady-state velocity overshoot in silicon , 1985 .
[10] Y.-K. Feng,et al. Simulation of submicrometer GaAs MESFET's using a full dynamic transport model , 1988 .
[11] E. H. Rhoderick,et al. Metal–Semiconductor Contacts , 1979 .
[12] A. H. Marshak,et al. Electrical current and carrier density in degenerate materials with nonuniform band structure , 1984, Proceedings of the IEEE.
[13] C. Snowden,et al. Two-dimensional hot-electron models for short-gate-length GaAs MESFET's , 1987, IEEE Transactions on Electron Devices.
[14] Claes Johnson. Numerical solution of partial differential equations by the finite element method , 1988 .