Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy

An experimental method to determine the temperature dependence of residual stress in three-dimensional (3D) structures was developed using polarized Raman spectroscopy. Stresses of a copper-filled silicon via at three temperatures, 223, 298, and 413 K were derived by measuring the frequency shift of the optical phonons through the backscattering geometry from the cross-section of the structure and assuming non-isotropic biaxial (horizontal and depth) stresses on the cross-section. Both stress components changed from tensile to compressive in almost all areas as the temperature changed from 213 to 413 K. The absolute stress values increased at both low and high temperatures and were smallest at 298 K, which was nearest to the process temperature of copper filling by plating. The main cause of stress is considered to be the difference in the coefficient of thermal expansion between copper and silicon. These results indicate that the temperature dependence of stress of copper-filled vias is affected mainly b...

[1]  Raphael Tsu,et al.  Temperature dependence of silicon Raman lines , 1982 .

[2]  Jose Menendez,et al.  Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects , 1984 .

[3]  K. Teo,et al.  Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy , 2011 .

[4]  S.H. Hong,et al.  Stress minimization in deep sub-micron full CMOS devices by using an optimized combination of the trench filling CVD oxides , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[5]  Suk-kyu Ryu,et al.  Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects , 2012 .

[6]  F. R. Kroeger,et al.  Absolute linear thermal‐expansion measurements on copper and aluminum from 5 to 320 K , 1977 .

[7]  K. Matsuda,et al.  Investigation of stress-induced defects in shallow trench isolation by cathodoluminescence and Raman spectroscopies , 2006 .

[8]  C. S. Tan,et al.  Integration of Low-κ Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief , 2012 .

[9]  G. Katagiri,et al.  Characterization of anisotropic stress around Si trenches by polarized Raman spectroscopy , 1995 .

[10]  Ingrid De Wolf,et al.  Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment , 1996 .

[11]  S. Thompson,et al.  Uniaxial-process-induced strained-Si: extending the CMOS roadmap , 2006, IEEE Transactions on Electron Devices.

[12]  M. Lee,et al.  Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors , 2005 .

[13]  R. Cook,et al.  Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via , 2011 .

[14]  John Damiano,et al.  Characterization and elimination of trench dislocations , 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

[15]  I. De Wolf,et al.  Theoretical and experimental Raman spectroscopy study of mechanical stress induced by electronic packaging , 2005 .

[16]  S. M. Hu,et al.  Stress‐related problems in silicon technology , 1991 .

[17]  B. Johnson,et al.  Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation , 2011 .

[18]  T. R. Hart,et al.  Temperature Dependence of Raman Scattering in Silicon , 1970 .

[19]  Fred H. Pollak,et al.  Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors , 1972 .

[20]  R. Loudon,et al.  The Raman effect in crystals , 1964 .

[21]  I. Wolf,et al.  Addendum: “Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment” [J. Appl. Phys. 79, 7148 (1996)] , 1999 .

[22]  M. Balkanski,et al.  Anharmonic effects in light scattering due to optical phonons in silicon , 1983 .

[23]  Paul Voisin,et al.  Raman scattering in GaSb‐AlSb strained layer superlattices , 1985 .

[24]  C. A. Swenson.  Recommended Values for the Thermal Expansivity of Silicon from 0 to 1000 K , 1983 .

[25]  E. Blank,et al.  Stress distribution in heteroepitaxial chemical vapor deposited diamond films , 1997 .

[26]  Fred H. Pollak,et al.  Effect of static uniaxial stress on the Raman spectrum of silicon , 1993 .

[27]  A. Lauwers,et al.  Silicide and Shallow Trench Isolation line width dependent stress induced junction leakage , 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

[28]  An application of cathodoluminescence to optimize the shallow trench isolation process , 2005, IEEE Transactions on Semiconductor Manufacturing.

[29]  I. Wolf.  Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits , 1996 .

[30]  A. K. Ramdas,et al.  Effect of Uniaxial Stress on the Raman Spectra of Cubic Crystals: Ca F 2 , Ba F 2 , and Bi 12 Ge O 20 , 1973 .