Application of the Newton–Raphson Method to Lifetime Spectroscopy for Extraction of Defect Parameters
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Ziv Hameiri | Yan Zhu | Yan Zhu | Z. Hameiri | M. Juhl | G. Coletti | Gianluca Coletti | Quoc Thong Le Gia | Mattias Klaus Juhl | Q. L. Le Gia
[1] Jan Schmidt,et al. Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors , 2003 .
[2] A. Cuevas,et al. Empirical determination of the energy band gap narrowing in p+ silicon heavily doped with boron , 2014 .
[3] D. Macdonald,et al. Temperature dependent electron and hole capture cross sections of iron-contaminated boron-doped silicon , 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
[4] Adrienne L. Blum,et al. Unraveling bulk defects in high‐quality c‐Si material via TIDLS , 2017 .
[5] M. Green. Intrinsic concentration, effective densities of states, and effective mass in silicon , 1990 .
[6] Karsten Bothe,et al. Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements , 2005 .
[7] W. Read,et al. Statistics of the Recombinations of Holes and Electrons , 1952 .
[8] Andreas Schenk,et al. A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation , 2006 .
[9] Karsten Bothe,et al. Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon , 2012 .
[10] Stefan Rein,et al. Lifetime Spectroscopy : A Method of Defect Characterization in Silicon for Photovoltaic Applications , 2005 .
[11] R. Pässler. Dispersion-related description of temperature dependencies of band gaps in semiconductors , 2002 .
[12] D. Macdonald,et al. Temperature dependent carrier lifetime studies on Ti-doped multicrystalline silicon , 2009 .
[13] Mustapha Lemiti,et al. Reassessment of the intrinsic carrier density temperature dependence in crystalline silicon , 2014 .
[14] G. Coletti,et al. Sensitivity of state‐of‐the‐art and high efficiency crystalline silicon solar cells to metal impurities , 2013 .
[15] K. Bothe,et al. Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation , 2014 .
[16] D. Macdonald,et al. Reassessment of the recombination properties of aluminium–oxygen complexes in n‐ and p‐type Czochralski‐grown silicon , 2016 .
[17] H. Savin,et al. Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy , 2016 .
[18] R. Hall. Electron-Hole Recombination in Germanium , 1952 .
[19] Karsten Bothe,et al. Recombination activity of interstitial chromium and chromium-boron pairs in silicon , 2007 .
[20] D. Macdonald,et al. Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon , 2014 .