论文信息 - A study of EST's short-circuit SOA

A study of EST's short-circuit SOA

Forward-biased safe operating area (FBSOA) at a short-circuit state of 600-V and 2500-V emitter-switched thyristors (ESTs) is reported. It is numerically demonstrated that the EST offers a better FBSOA than the insulated-gate bipolar transistor (IGBT). The EST exhibits a current saturation because in the short-circuit state, this device operates like an IGBT due to the pinch-off of the lateral N-MOSFET. There are two types of destructive failure mechanisms: one is due to avalanche multiplication while the other is attributed to latch-up of the parasitic thyristor. It is concluded that the EST exhibits a wider FBSOA than an IGBT because of a homogeneous current flow.<<ETX>>

Bantval J. Baliga | M. S. Shekar | Noriyuki Iwamuro

[1] T. Laska,et al. A 2000 V non-punchthrough IGBT with high ruggedness , 1992 .

[2] S. Tagami,et al. Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs , 1991 .

[3] S. Tandon,et al. High-voltage current saturation in emitter switched thyristors , 1991, IEEE Electron Device Letters.

[4] Wolfgang Fichtner,et al. Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[5] Gerhard Miller,et al. A 2000 V-non-punch-through-IGBT with dynamical properties like a 1000 V-IGBT , 1990, International Technical Digest on Electron Devices.

[6] Wolfgang Fichtner,et al. Design aspects of MOS-controlled thyristor elements: technology, simulation, and experimental results , 1991 .