论文信息 - Theoretical performance of very long wavelength InAs/InxGa1−xSb superlattice based infrared detectors

Theoretical performance of very long wavelength InAs/InxGa1−xSb superlattice based infrared detectors

Optimal detectivities of very long wavelength (11–19 μm) photovoltaic infrared detectors based on ideal InAs/InGaSb superlattices are calculated. Accurate K⋅p band structures are used to obtain radiative, electron–electron and hole–hole band‐to‐band Auger, and for the first time shallow acceptor level assisted Auger recombination rates for n‐on‐p photodiodes. The suppression of band‐to‐band Auger by ‘‘band gap engineering’’ is predicted to lead to improved background‐limited operating temperatures just as it does in long‐wave InAs/InGaSb infrared detectors.

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