Si1−xGex/Si asymmetric 2×2 electro‐optical switch of total internal reflection type

Based on plasma dispersion of Si1−xGex, we have fabricated asymmetric 2×2 switches of total internal reflection type, in which Si1−xGex was grown by molecular beam epitaxy. The optimum intersecting angle is 4°, and the crosstalk is less than −10.6 dB at 76 mA injection current. The insertion loss is 2.8 dB, and the switch time is 0.6 μs.