Der Einfluß von überschüssigem antistrukturellem Bi auf die Wärmeleitfähigkeit des Kristallgitters von Bi2Te3, Bi2Te3-Sb2Te3 und Bi2Te3-Bi2S3 mit Jodbeimischung
暂无分享,去创建一个
[1] G. R. Miller,et al. Evidence for the existence of antistructure defects in bismuth telluride by density measurements , 1964 .
[2] E. Burstein,et al. De Haas-van Alphen and high field galvanomagnetic studies of the Bi2Te3 valence band structure , 1963 .
[3] I. Teramoto,et al. Relations between the electronic properties and the chemical bonding of sbxBi2−xTe3−ySey system , 1961 .
[4] D. Haneman. COMPARISON OF STRUCTURES OF SURFACES PREPARED IN HIGH VACUUM BY CLEAVING AND BY ION BOMBARDMENT AND ANNEALING , 1960 .
[5] G. Offergeld,et al. Determination de la composition a fusion congruente de semiconducteurs binaires par analyse thermique differentielle: Application a Bi2Te3, Sb2Te2 et Bi2Se3 , 1959 .
[6] F. Kroger. On the relation between non-stoichiometry and the formation of donor and acceptor centres in compounds , 1958 .
[7] C. Goodman,et al. Chemical bonding in bismuth telluride , 1958 .
[8] C. Satterthwaite,et al. Electrical and Thermal Properties of Bi 2 Te 3 , 1957 .
[9] I. Austin,et al. Some Optical Properties of Bi2Te3-Bi2Se3 Alloys , 1957 .
[10] T. Harman,et al. Preparation and some physical properties of Bi2Te3, Sb2Te3, and As2Te3 , 1957 .