论文信息 - Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition - 字舞流文

Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

C. Leroux | X. Garros | J. Damlencourt | A. Papon | F. Martin | O. Renault | S. Marthon | D. Samour | A. M. Papon | M.-N. Séméria | X. Garros