Oriented growth in PZT thin films

Abstract Pb1.1(Zr0.7Ti0.3)O3 (PZT) thin films with different preferred orientation were fabricated from different precursor solutions by the sol-gel method on (111)-Pt/Ti/SiO2/Si-(100) substrates. The concentration of acetic acid was found to affect strongly the attribution and distribution of stresses in the films, and then to further affect the crystal orientation of the films. The reproducible microstructure and textures can be obtained by modifying the [Acet]/[Ti] molar ratio. To confirm this stress effect, an external stress was applied to induce the oriented growth of the thin films. The mechanism of the nucleation, growth and orientation of the films is discussed.

[1]  Qi Zhang,et al.  Low temperature crystallization of lead zirconate titanate thin films by a sol-gel method , 1999 .

[2]  M. Shimizu,et al.  Control of Orientation of Pb(Zr, Ti)O3 Thin Films Using PbTiO3 Buffer Layer , 1994 .

[3]  D. Remiens,et al.  Structure control of Pb(Zr,Ti)O3 films using PbTiO3 buffer layers produced by magnetron sputtering , 1997 .

[4]  Katsuhiro Aoki,et al.  Preparation of <100>-oriented Lead-Zirconate-Titanate Films by Sol-Gel Technique , 1993 .

[5]  Jun Amano,et al.  Single-crystal Pb(ZrxTi1−x)O3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties , 1997 .

[6]  J. Shyu,et al.  Sol–Gel Derived Pb(Zr,Ti)O3 Thin Films: Effects of PbTiO3 Interlayer , 1996 .

[7]  G. Scherer Recent progress in drying of gels , 1992 .

[8]  J. T. Evans,et al.  An experimental 512-bit nonvolatile memory with ferroelectric storage cell , 1988 .

[9]  Seshu B. Desu,et al.  Low temperature perovskite formation of lead zirconate titanate thin films by a seeding process , 1993 .

[10]  Roger W. Whatmore,et al.  Pyroelectric devices and materials , 1986 .

[11]  M. Sayer,et al.  Surface acoustic wave propagation on lead zirconate titanate thin films , 1988 .

[12]  S. Desu,et al.  Highly c-axis oriented Pb(Zr, Ti)O3 thin films grown on Ir electrode barrier and their electrical properties , 1999 .

[13]  Y. Yano,et al.  GROWTH AND CHARACTERIZATION OF 10-NM-THICK C-AXIS ORIENTED EPITAXIAL PBZR0.25TI0.75O3 THIN FILMS ON (100)SI SUBSTRATE , 1998 .

[14]  Nava Setter,et al.  Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates , 1994 .

[15]  J. R. Blachere,et al.  Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors , 1998 .

[16]  Yoon J. Song,et al.  Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1−xTix)O3 thin films , 1998 .