Using time-aware memory sensing to address resistance drift issue in multi-level phase change memory
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Wei Xu | Tong Zhang | W. Xu | Tong Zhang
[1] D. Ielmini,et al. Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study , 2009, IEEE Transactions on Electron Devices.
[2] Kinam Kim,et al. Memory Technologies for sub-40nm Node , 2007, 2007 IEEE International Electron Devices Meeting.
[3] S. Braga,et al. Dependence of resistance drift on the amorphous cap size in phase change memory arrays , 2009 .
[4] Andrea L. Lacaita,et al. Phase change memories: State-of-the-art, challenges and perspectives , 2005 .
[5] Ferdinando Bedeschi,et al. A Multi-Level-Cell Bipolar-Selected Phase-Change Memory , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.
[6] Byung-Gil Choi,et al. A 0.1-$\mu{\hbox {m}}$ 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation , 2007, IEEE Journal of Solid-State Circuits.
[7] D. Ielmini,et al. Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories , 2007, IEEE Transactions on Electron Devices.
[8] Y.C. Chen,et al. Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory , 2007, 2007 IEEE International Electron Devices Meeting.
[9] Kinam Kim,et al. Enhanced write performance of a 64 Mb phase-change random access memory , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..
[10] Naoki Kitai,et al. Phase change RAM operated with 1.5-V CMOS as low cost embedded memory , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..
[11] C.H. Lam. The Quest for the Universal Semiconductor Memory , 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.
[12] Ajay Dholakia,et al. Reduced-complexity decoding of LDPC codes , 2005, IEEE Transactions on Communications.
[13] A. Pirovano,et al. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials , 2004, IEEE Transactions on Electron Devices.