论文信息 - Extreme low-voltage floating-gate CMOS transconductance amplifier

Extreme low-voltage floating-gate CMOS transconductance amplifier

In this paper we present an ultra low-voltage (ULV) floating-gate (FG) transconductance amplifier The amplifier can operate at supply voltages down to 0.3 V in a standard digital double poly CMOS process. The amplifier consists of three subcircuits, the single input analog FG inverter, the additive (double input) analog FG inverter with tunable gain and a FG digital inverter. Preliminary measurements of the transconductance amplifier are provided.

Yngvar Berg | Snorre Aunet | Øivind Næss | Mats Erling Høvin | Henning Gundersen

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