论文信息 - In distribution in InGaAs quantum wells and quantum islands

In distribution in InGaAs quantum wells and quantum islands

The In distribution in epitaxial InGaAs layers grown by molecular-beam epitaxy on GaAs (001) was investigated using transmission electron microscopy (TEM). InGaAs layers with In concentrations between 16 % and 28 % were deposited at temperatures between 500 °C and 548 °C. In concentration profiles were obtained from high-resolution TEM images by composition evaluation by lattice fringe analysis. The quantum wells and quantum islands are characterized by an asymmetric In distribution demonstrating the strong influence of In segregation. A significant increase of the In segregation efficiency is observed with increasing growth temperature.

[1] Pierre Stadelmann,et al. EMS-A software package for electron diffraction analysis and HREM image simulation in materials science , 1987 .

[2] T. Gemming,et al. Optimization of TEm specimen preparation by double-sided ion beam thinning under low angles , 1999 .

[3] D. D. Awschalom,et al. Quantum information processing using quantum dot spins and cavity QED , 1999 .

[4] D. Gerthsen,et al. Atomic Scale Strain and Composition Evaluation from High-Resolution Transmission Electron Microscopy Images , 1999 .

[5] G. Abstreiter,et al. Quantification of segregation and mass transport in InxGa1-xAs/GaAs Stranski-Krastanow layers , 2001 .

[6] Ryoichi Ito,et al. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells , 1992 .

[7] T. E. Lamas,et al. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction , 2003 .