1060 nm VCSEL for up to 40 Gbit/s data transmission

A GaAs-based 1060 nm VCSEL with strained InGaAs/GaAsP QWs, doped DBRs, a short optical cavity, and multiple oxide apertures is presented. Modulation up to 40 Gbit/s at 25°C and 30 Gbit/s at 85°C is demonstrated.

[1]  H. Hatakeyama,et al.  Highly Reliable High-Speed 1.1- $\mu$m-Range VCSELs With InGaAs/GaAsP-MQWs , 2010, IEEE Journal of Quantum Electronics.

[2]  P. Westbergh,et al.  Impact of Photon Lifetime on High-Speed VCSEL Performance , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[3]  Kazuya Nagashima,et al.  A Record 1-km MMF NRZ 25.78-Gb/s Error-Free Link Using a 1060-nm DIC VCSEL , 2016, IEEE Photonics Technology Letters.

[4]  Johan S. Gustavsson,et al.  High-Speed VCSELs With Strong Confinement of Optical Fields and Carriers , 2016, Journal of Lightwave Technology.