Investigation of diethylarsine as a replacement for arsine in organometallic vapor‐phase epitaxy of GaAs

Epitaxial growth of GaAs has been performed with diethylarsine (DEAs) to investigate its potential as a replacement of arsine. Triethylgallium (TEG) and trimethylgallium (TMG) were used as group‐III sources and carbon incorporation into the epilayers was compared. The growths were carried out under low‐pressure conditions (130 Pa–1.3 kPa) to avoid a gas‐phase reaction between the precursors. All epilayers exhibited p‐type conductivity, and the main acceptor impurity was carbon. The lowest hole concentrations were ∼1016 and ∼1017 cm−3 for TEG and TMG, respectively. The dependence of hole concentration on V/III ratio suggests that the carbon incorporation comes mainly from TMG and DEAs for the TMG/DEAs mixture, and from DEAs for the TEG/DEAs mixture. These results indicated that the contribution of the H atom from the As—H bond in DEAs on reduction of carbon incorporation was not enough to grow high‐purity GaAs.

[1]  G. Haacke,et al.  Epitaxial growth of high‐mobility GaAs using tertiarybutylarsine and triethylgallium , 1990 .

[2]  G. B. Stringfellow,et al.  OMVPE growth of GaAs using dimethylarsine , 1989 .

[3]  Hitoshi Tanaka,et al.  MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with Tertiarybutylarsine , 1989 .

[4]  Hiroshi Ito,et al.  New Approach to Low-Temperature Epitaxial Growth of GaAs by Photostimulated Metalorganic Chemical Vapor Deposition , 1988 .

[5]  G. B. Stringfellow.  Non-hydride group V sources for OMVPE , 1988 .

[6]  M. Lamont,et al.  Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs , 1988 .

[7]  A. Wynn,et al.  Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs , 1988 .

[8]  D. Tennant,et al.  Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4 , 1988 .

[9]  Klavs F. Jensen,et al.  In situ mass spectroscopy studies of the decomposition of organometallic arsenic compounds in the presence of Ga(CH3)3 and Ga(C2H5)3 , 1988 .

[10]  P. Balk,et al.  The use of organic As precursors in the low pressure MOCVD of GaAs , 1988 .

[11]  K. Jensen,et al.  In situ mass spectroscopy and thermogravimetric studies of GaAs MOCVD gas phase and surface reactions , 1987 .

[12]  R. Bhat,et al.  Growth of high‐quality GaAs using trimethylgallium and diethylarsine , 1987 .

[13]  M. Mihara,et al.  Low-Pressure OMVPE of GaAs Using Triethylgallium , 1986 .

[14]  M. Yoshida,et al.  Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2 , 1985 .

[15]  T. Kuech,et al.  Mechanism of carbon incorporation in MOCVD GaAs , 1984 .

[16]  H. Mori,et al.  Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD , 1983 .

[17]  G. B. Stringfellow,et al.  Photoluminescence of carbon-implanted GaAs , 1981 .