Lasing in GaN microdisks pivoted on Si

Arrays of pivoted GaN microdisks have been fabricated on a GaN∕Si material by a combination of dry and wet etching. The Si material beneath the GaN microdisks is removed by wet etching, leaving behind a fine pillar to support the disks. Raman spectroscopy reveals substantial strain relaxation in these structures. Resonant modes, corresponding to whispering gallery modes, are observed in the photoluminescence spectra. Stimulated emission is achieved at higher optical pumping intensities.

[1]  Martin D. Dawson,et al.  Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes , 2003 .

[2]  Theodore D. Moustakas,et al.  High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy , 2000 .

[3]  Peng Chen,et al.  Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111) , 2002 .

[4]  Armin Dadgar,et al.  Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate , 2006 .

[5]  M. Dawson,et al.  Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback , 2001 .

[6]  Fabrice Semond,et al.  Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks , 2003 .

[7]  Manijeh Razeghi,et al.  Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates , 1994 .

[8]  S. Nakamura,et al.  Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching , 2005 .

[9]  Bernard Gil,et al.  Raman determination of phonon deformation potentials in α-GaN , 1996 .

[10]  Yu Peng,et al.  Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕GaN and Ta2O5∕SiO2 distributed Bragg reflector , 2005 .

[11]  Toshihiko Baba,et al.  Low-threshold lasing and Purcell effect in microdisk lasers at room temperature , 2003 .

[12]  E. Purcell,et al.  Resonance Absorption by Nuclear Magnetic Moments in a Solid , 1946 .

[13]  H. Morkoç,et al.  GaN grown on hydrogen plasma cleaned 6H‐SiC substrates , 1993 .

[14]  S. Chua,et al.  Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates , 2004 .