Characteristics of metal/tunnel-oxide/n/p+ silicon switching devices—II: Two-dimensional effects in oxide-isolated structures
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[1] J. Simmons,et al. Characteristics of metal/tunnel-oxide/N/P+ silicon switching devices—I: Effects of device geometry and fabrication processes , 1981 .
[2] J. G. Simmons,et al. Theory of switching in p-n-insulator (tunnel)-metal devices—II: Avalanche mode , 1980 .
[3] F. Serra-Mestres,et al. A criterion for determining the switching voltage of a metal-thin insulator-Si(n)-Si(p+) device , 1979 .
[4] J. Simmons,et al. Characteristics of three-terminal metal-tunnel if oxide-n/p+ devices , 1979 .
[5] J. G. Simmons,et al. Theory of switching in p-n-insulator (tunnel)-metal devices: Part I: Punchthrough mode , 1979 .
[6] J. Simmons,et al. Interface state charge in thin-oxide m.i.s.t. devices , 1979 .
[7] A. Owen,et al. The characterisation of metal-thin insulator-n-p+ silicon switching devices , 1978 .
[8] H. Wegener,et al. Steady-state characteristics of two terminal inversion-controlled switches , 1978 .
[9] J. Simmons,et al. Theory of switching phenomena in metal/semi-insulator/n-p+ silicon devices , 1977 .
[10] J. Simmons,et al. Experimental studies of switching in metal semi-insulating n-p+ silicon devices , 1977 .
[11] K. Kawamura,et al. Silicon p−n insulator-metal (p-n-I-M) devices , 1976 .
[12] M. Morimoto,et al. Thin‐MIS‐Structure Si Negative‐Resistance Diode , 1972 .
[13] A. S. Grove. Physics and Technology of Semiconductor Devices , 1967 .