Memristor Crossbar for Adaptive Synchronization

Nonlinear circuits may be synchronized with interconnections that evolve in time incorporating mechanisms of adaptation found in many biological systems. Such dynamics in the links is efficiently implemented in electronic devices by using memristors. However, the approach requires a massive amount of interconnections (of the order of <inline-formula> <tex-math notation="LaTeX">$N^{2}$ </tex-math></inline-formula>, where <inline-formula> <tex-math notation="LaTeX">$N$ </tex-math></inline-formula> is the number of nonlinear circuits to be synchronized). This issue is solved in this paper by adopting a memristor crossbar architecture for adaptive synchronization. The functionality of the structure is demonstrated, with respect to different switching characteristics, via a simulation-based evaluation using a behavioral threshold-type model of voltage-controlled bipolar memristor. In addition, we show that the architecture is robust to device variability and faults: quite surprisingly, when faults are localized, the performance of the approach may also improve as adaptation becomes more significant.