A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors
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[1] R. Burgos,et al. Active dv/dt control of 600V GaN transistors , 2016, 2016 IEEE Energy Conversion Congress and Exposition (ECCE).
[2] Rouger Nicolas,et al. High speed optical gate driver for wide band gap power transistors , 2016 .
[3] I. Kallfass,et al. Pulsed measurement of sub-nanosecond 1000 V/ns switching 600 V GaN HEMTs using 1.5 GHz low-impedance voltage probe and 50 Ohm scope , 2017, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
[4] T. Jahns,et al. Flexible dv/dt and di/dt control method for insulated gate power switches , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).
[5] Olli Viitala,et al. A Scalable Low-Voltage Signaling (SLVS) Driver for a Low-Power MIPI M-PHY Serial Link in 40 nm CMOS , 2012 .
[6] Ashok Bindra,et al. Wide-Bandgap Power Devices: Adoption Gathers Momentum , 2018, IEEE Power Electronics Magazine.
[7] Pierre Lefranc,et al. STATE OF THE ART OF DV/DT AND DI/DT CONTROL OF INSULATED GATE POWER SWITCHES , 2007 .