AlGaP LEDs optimization

LED parameters trends, depending doping & temperatures were investigated by simulation. Working area in heterostructure can be presented as a sum of “NanoLEDs”. in Simulation and experimental results correlation is achieved. The optimum AlGaP working area consists of 5 QW. In the central QW there is a maximum radiation; edge QWs - “barriers” which supply electrons/holes into the working area.

[1]  S. Didenko,et al.  Structure of V-defects in a-GaN films grown on r-sapphire substrate , 2019, Journal of Physics: Conference Series.

[2]  K. Sivalertporn,et al.  Effect of quantum well width on the electron and hole states in different single quantum well structures , 2019, Journal of Physics: Conference Series.

[3]  M. Orlova,et al.  MOCVD growth GaN on sapphire , 2019, IOP Conference Series: Materials Science and Engineering.

[4]  S. P. Abbasi,et al.  Improvement of AlGaInAs/AlGaAs laser diode electro-optics characteristics by graded refractive index profile broadened waveguide , 2019, Optics & Laser Technology.

[5]  M. Orlova,et al.  Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire , 2019, physica status solidi (b).

[6]  M. Orlova,et al.  AlGaN optimization for photodetectors , 2019, Optical and Quantum Electronics.

[7]  E. Chang,et al.  Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD , 2018 .

[8]  E. Ozturk,et al.  The effect of barrier width on the electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells , 2018 .

[9]  Xiaohang Li,et al.  Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling , 2018 .

[10]  R. Ispasoiu,et al.  Quantum Wells, Superlattices, and Band-Gap Engineering , 2017 .

[11]  O. Rabinovich,et al.  Heterostructure optimization for increasing LED efficiency , 2016 .

[12]  Wang Wei,et al.  Optimization of High Power 1.55-μm Single Lateral Mode Fabry—Perot Ridge Waveguide Lasers* , 2015 .

[13]  O. Rabinovich.  AIIIBV heterostructure simulation and investigation , 2014 .

[14]  Y. Duan,et al.  Characteristic Optimization of 1.3 μm High-Speed MQW InGaAsP-AlGaInAs Lasers , 2012 .

[15]  O. Rabinovich,et al.  The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes , 2009 .

[16]  G. Guillot,et al.  Photoluminescence and band offsets of AlInAs/InP , 1995 .

[17]  M. Ohring,et al.  Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs , 1992 .

[18]  P. Voisin,et al.  Investigations of MOCVD-grown AlInAs-InP type II heterostructures , 1992 .