InN nanotips as excellent field emitters

Unidirectional single crystalline InN nanoemitters were fabricated on the silicon (111) substrate via ion etching. These InN nanoemitters showed excellent field emission properties with the threshold field as low as 0.9V∕μm based on the criterion of 1μA∕cm2 field emission current density. This superior property is ascribed to the double enhancement of (1) the geometrical factor of the InN nanostructures and (2) the inherently high carrier concentration of the degenerate InN semiconductor with surface electron accumulation layer induced downward band bending effect that significantly reduced the effective electron tunneling barrier even under very low external field.

[1]  Xiao Wei Sun,et al.  Field emission from zinc oxide nanopins , 2003 .

[2]  O. Ambacher,et al.  Morphology and surface electronic structure of MBE grown InN , 2007 .

[3]  Pulsed laser deposited nanostructured InN thin films as field emitters , 2007 .

[4]  W. Hofmeister,et al.  Carbon nanotubes field emission devices grown by thermal CVD with palladium as catalysts , 2004 .

[5]  W. Schaff,et al.  Intrinsic electron accumulation at clean InN surfaces. , 2004, Physical review letters.

[6]  Kuei-Hsien Chen,et al.  Self-selected apex angle distribution in aluminum nitride and indium nitride nanotips , 2006 .

[7]  Lester F. Eastman,et al.  Surface chemical modification of InN for sensor applications , 2004 .

[8]  Yoshiki Saito,et al.  RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys , 2003 .

[9]  B. R. Nag,et al.  On the band gap of indium nitride , 2003 .

[10]  Hiroshi Harima,et al.  Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap. , 2002 .

[11]  C. Shih,et al.  Field emission properties of self-assembled InN nano-structures: Effect of Ga incorporation , 2005 .

[12]  Klaus Kern,et al.  Scanning field emission from patterned carbon nanotube films , 2000 .

[13]  Michael S. Shur,et al.  Transient electron transport in wurtzite GaN, InN, and AlN , 1999 .

[14]  R. Gomer,et al.  Field Emission and Field Ionization , 1961 .

[15]  K. Jensen.  Theory of Field Emission , 2002 .

[16]  S. K. Chen,et al.  Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma‐assisted molecular beam epitaxy , 2006 .

[17]  C. Poweleit,et al.  Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy , 2005 .

[18]  Michael S. Shur,et al.  Potential performance of indium-nitride-based devices , 2006 .

[19]  S. Lau,et al.  Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique , 2005 .

[20]  A. Yamamoto,et al.  Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell , 1994 .

[21]  Wladek Walukiewicz,et al.  Effects of the narrow band gap on the properties of InN , 2002 .

[22]  Akio Yamamoto,et al.  Indium nitride (InN): A review on growth, characterization, and properties , 2003 .

[23]  R. Fowler,et al.  Electron Emission in Intense Electric Fields , 1928 .