Integration of photodetectors with lasers for optical interconnects using 200 mm waferscale III–V/SOI technology

We demonstrate efficient photodetectors on top of a laser epitaxial structure completely fabricated using 200 mm wafer scale III–V/SOI technology enabling very dense integration of lasers and detectors for optical interconnect circuits.

[1]  D.A.B. Miller,et al.  Rationale and challenges for optical interconnects to electronic chips , 2000, Proceedings of the IEEE.

[2]  T. Krauss,et al.  An out-of-plane grating coupler for efficient butt-coupling between compact planar waveguides and single-mode fibers , 2002 .

[3]  Eby G. Friedman,et al.  On-chip optical interconnect roadmap: challenges and critical directions , 2005 .

[4]  J. Bowers,et al.  Electrically pumped hybrid AlGaInAs-silicon evanescent laser. , 2006, Optics express.

[5]  M. Smit,et al.  Adhesive Bonding of InP ∕ InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene , 2006 .

[6]  Philippe Regreny,et al.  Improved design of an InP-based microdisk laser heterogeneously integrated with SOI , 2009, 2009 6th IEEE International Conference on Group IV Photonics.

[7]  P. Crozat,et al.  42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide. , 2009, Optics express.

[8]  M. Lipson,et al.  Ultra-low capacitance and high speed germanium photodetectors on silicon. , 2009, Optics express.

[9]  L. Di Cioccio,et al.  InP/InGaAs photodetector on SOI circuitry , 2009, 2009 6th IEEE International Conference on Group IV Photonics.

[10]  L. Grenouillet,et al.  CMOS compatible contacts and etching for InP-on-silicon active devices , 2009, 2009 6th IEEE International Conference on Group IV Photonics.

[11]  Z. Sheng,et al.  InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides. , 2010, Optics express.