论文信息 - Atomistic modeling of crystal-defect mobility and interactions - 字舞流文

Atomistic modeling of crystal-defect mobility and interactions

V. Bulatov | S. Yip | M. Nastar | J. F. Justo

[1] Bulatov,et al. Saddle-point configurations for self-interstitial migration in silicon. , 1996, Physical review. B, Condensed matter.

[2] V. Bulatov,et al. Atomic modes of dislocation mobility in silicon , 1995 .

[3] Brown,et al. Calculation of thermodynamic and transport properties of intrinsic point defects in silicon. , 1993, Physical review. B, Condensed matter.

[4] H. Balamane,et al. Comparative study of silicon empirical interatomic potentials. , 1992, Physical review. B, Condensed matter.

[5] S. Phillpot,et al. On the mechanism of grain-boundary migration in metals: A molecular dynamics study , 1991 .

[6] R. Elber,et al. Reaction path study of conformational transitions in flexible systems: Applications to peptides , 1990 .

[7] Weber,et al. Computer simulation of local order in condensed phases of silicon. , 1985, Physical review. B, Condensed matter.

[8] Thomas A. Weber,et al. Hidden structure in liquids , 1982 .

[9] P. Hirsch. The Structure And Electrical Properties Of Dislocations In Semiconductors , 1980 .

[10] Ron Elber,et al. A method for determining reaction paths in large molecules: application to myoglobin , 1987 .

[11] Paul Shewmon,et al. Diffusion in Solids , 2016 .

[12] G. Vineyard. Frequency factors and isotope effects in solid state rate processes , 1957 .