论文信息 - Field and hot electron-induced degradation in GaN-based power MIS-HEMTs

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs

Abstract We investigate the degradation of AlGaN/GaN MIS-HEMTs submitted to gate step-stress experiments, and demonstrate the existence of field- and hot-electron induced processes. When the devices are submitted to gate-step stress with high VDS > 50 V, four different regimes are identified: (i) for VGS 0 V, the density of hot electrons is significantly reduced, due to the increased interface scattering and device temperature. As a consequence, EL signal drops to zero, and the electrons trapped during phase (ii) are de-trapped back to the channel, where they are attracted by the high 2DEG potential. (iv) Finally, for VGS > 5 V, a significant increase in threshold voltage is detected. This effect is observed only for high positive voltages, i.e. when a significant leakage current flows through the gate. Such gradual degradation is ascribed to the injection of electrons from the 2DEG to the gate insulator, which is a field-driven effect. These results were obtained by combined electrical and optical characterization carried out at different voltages during the step stress.

[1] G. Meneghesso,et al. Analysis of the Reliability of AlGaN/GaN HEMTs Submitted to On-State Stress Based on Electroluminescence Investigation , 2013, IEEE Transactions on Device and Materials Reliability.

[2] Gaudenzio Meneghesso,et al. Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin , 2017, IEEE Transactions on Electron Devices.

[3] M. Tack,et al. AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV) , 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[4] Gaudenzio Meneghesso,et al. Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress , 2016, IEEE Electron Device Letters.

[5] Gijs Bosman,et al. Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors , 2013 .

[6] Jungwoo Joh,et al. GaN HEMT reliability , 2009, Microelectron. Reliab..

[7] Gaudenzio Meneghesso,et al. Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons , 2012 .

[8] G. Verzellesi,et al. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives , 2008, IEEE Transactions on Device and Materials Reliability.