Abstract The relentless progress of semiconductor integration is reducing the area required for circuits. As die size shrinks the area available for power and ground bumps on wafer-level chip-scale packages (WLCSPs) also shrinks and, with fewer power bumps, the bump current density is now approaching levels where electromigration is a significant reliability concern. Package designers need guidelines on the minimum number of power and ground bumps for a given application and reliability requirement. The failure rate due to electromigration depends on many factors such as alloy composition, operating temperature, and current density. Some of these have time-dependant components including grain structure, current distribution, and alloy component distribution. It has been found that these, in turn, are also dependent on other factors such as thermomigration and strain-induced coarsening. In such a dynamic system the time-dependant materials properties so obfuscate the extrapolation parameters as to render accelerated testing indeterminate.
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