Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications
暂无分享,去创建一个
[1] G. Eisenstein,et al. Characteristics of metal-insulator-semiconductor capacitors based on high-k HfAlO dielectric films obtained by low-temperature electron-beam gun evaporation , 2004 .
[2] P. Schnabel,et al. Analysis of high- k HfO 2 and HfSiO 4 dielectric films , 2004 .
[3] Y. Xuan,et al. Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process , 2004 .
[4] N. Lee,et al. Change in the chemical state and thermal stability of HfO2 by the incorporation of Al2O3 , 2004 .
[5] G. Lucovsky,et al. Spectroscopic study of chemical phase separation in zirconium silicate alloys , 2003 .
[6] Olivier Renault,et al. HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy , 2002 .
[7] S. Hayashi,et al. Effect of Hf metal predeposition on the properties of sputtered HfO2/Hf stacked gate dielectrics , 2002 .
[8] Krishna Shenai,et al. The design, characterization, and modeling of RF LDMOSFETs on silicon-on-insulator material , 2002 .
[9] Je-Hun Lee,et al. Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition , 2002 .
[10] J. Ku,et al. Annealing effects of aluminum silicate films grown on Si(100) , 2002 .
[11] Eduard A. Cartier,et al. Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films , 2001 .
[12] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .
[13] J.M.C. Stork,et al. The impact of high-/spl kappa/ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs , 1999 .
[14] Chenming Hu,et al. MOS capacitance measurements for high-leakage thin dielectrics , 1999 .
[15] S. M. Sze,et al. Physics of semiconductor devices , 1969 .