A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
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S. Decoutere | T. Vandeweyer | S. Van Huylenbroeck | K. De Meyer | A. Sibaja-Hernandez | D. Radisic | S. You | N. D. Nguyen | R. Venegas | P. Ong | W. Lee | G. Winderickx
[1] Jae-Sung Rieh,et al. On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds , 2009, IEEE Transactions on Electron Devices.
[2] D. Dutartre,et al. SiGe HBTs featuring fT ≫400GHz at room temperature , 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
[3] G.A.M. Hurkx,et al. A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process , 2007, 2007 IEEE International Electron Devices Meeting.
[4] D. Knoll,et al. SiGe HBT module with 2.5 ps gate delay , 2008, 2008 IEEE International Electron Devices Meeting.