High performance low-temperature poly-Si n-channel TFTs for LCD
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Kenji Miyata | Hideaki Kawakami | Akio Mimura | Kikuo Ono | Nobutake Konishi | K. Miyata | Junichi Ohwada | Y. A. Ono | Suzuki Takashi | Yoshikazu Hosokawa | K. Ono | N. Konishi | A. Mimura | J. Ohwada | H. Kawakami | Y. Hosokawa | Suzuki Takashi
[1] W. H. Dumbaugh,et al. Polycrystalline silicon thin-film transistors on a novel 800°C glass substrate , 1986, IEEE Electron Device Letters.
[2] H. Shichijo,et al. Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon , 1985, IEEE Journal of Solid-State Circuits.
[3] C. H. Seager,et al. Studies of the hydrogen passivation of silicon grain boundaries , 1981 .
[4] D. Antoniadis,et al. Leakage current mechanisms in Hydrogen-passivated fine-grain polycrystalline Silicon on insulator MOSFET's , 1986, IEEE Transactions on Electron Devices.
[5] H. Shichijo,et al. Anomalous leakage current in LPCVD PolySilicon MOSFET's , 1985, IEEE Transactions on Electron Devices.
[6] R. B. Iverson,et al. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters , 1987 .
[7] David W. Greve,et al. Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films , 1988 .
[8] P. Chatterjee,et al. Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source , 1984, IEEE Electron Device Letters.
[10] Y. Shiraki,et al. Thin‐film transistors on molecular‐beam‐deposited polycrystalline silicon , 1984 .
[11] K. Miyata,et al. Crystallization of LPCVD Silicon Films by Low Temperature Annealing , 1989 .
[12] K. Miyata,et al. A high-resolution active matrix using p-channel SOI TFTs , 1988 .
[13] D. Greve,et al. High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films , 1987, IEEE Electron Device Letters.
[14] T. Kamins,et al. Hydrogenation of transistors fabricated in polycrystalline-silicon films , 1980, IEEE Electron Device Letters.
[15] D. Thomson,et al. Thermionic‐field emission from interface states at grain boundaries in silicon , 1984 .
[16] P. Migliorato,et al. High‐performance thin‐film transistors from optimized polycrystalline silicon films , 1987 .
[17] K. Tanaka,et al. Characteristics of offset-structure polycrystalline-silicon thin-film transistors , 1988, IEEE Electron Device Letters.
[18] Jacques I. Pankove,et al. Hydrogenation and dehydrogenation of amorphous and crystalline silicon , 1978 .
[19] Hydrogenation by ion implantation for scaled SOI/PMOS transistors , 1985, IEEE Electron Device Letters.
[20] W. Lanford,et al. The hydrogen content of plasma‐deposited silicon nitride , 1978 .
[21] G. Velasco,et al. Hydrogenation of evaporated amorphous silicon films by plasma treatment , 1978 .
[22] D. Greve,et al. Crystallization of Amorphous LPCVD Silicon Films and Application to Bipolar and Thin Film Transistors , 1987 .
[23] D. Antoniadis,et al. Comparison of different techniques for passivation of small-grain polycrystalline-Si MOSFET's , 1985, IEEE Electron Device Letters.
[24] J. G. Groot,et al. Grain boundary states and the characteristics of lateral polysilicon diodes , 1982 .