论文信息 - GaN Gunn diodes for THz signal generation

GaN Gunn diodes for THz signal generation

The frequency and power capability of GaN-based Gunn diodes are evaluated using transient hydrodynamic simulations. GaN Gunn oscillators with 2 /spl mu/m-thick GaN Gunn diodes are predicted to have a fundamental frequency of 148-162 GHz and power density of >10/sup 5/ W/cm/sup 2/. Due to their high frequency and power characteristics, applications of these devices are envisaged for THz signal generation.

Egor Alekseev | D. Pavlidis | D. Pavlidis | E. Alekseev

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