Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)

GaAs (001) surfaces in both metalorganic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are studied under As stabilisation as well as during growth by reflectance anisotropy spectroscopy (RAS). During MBE growth reflection high energy electron diffraction (RHEED) measurements are performed simultaneously. As a consequence of the oscillating density of steps during island growth, time resolved RAS measurements show oscillations with monolayer periodicity in both epitaxial systems. In order to separate morphology related and surface reconstruction domain related contributions to RAS oscillations an anisotropic effective medium model is applied. In both MBE and MOVPE domains of reduced As coverage close to the island boundaries are found to be responsible for RAS oscillations. In MBE this typically results in oscillations between spectra belonging to (2 x 4) reconstructions of different mean As dimer density. In MOVPE the surface oscillates between states with an increased and a decreased concentration of Ga dimers while c(4 x 4)-like As dimers are still present.

[1]  D. Kisker,et al.  Investigation of the relationship between reflectance difference spectroscopy and surface structure using grazing incidence X-ray scattering , 1995 .

[2]  W. Richter,et al.  Metalorganic vapour phase epitaxial growth on vicinal GaAs (001) surfaces studied by reflectance anisotropy spectroscopy , 1995 .

[3]  D. Aspnes.  Observation and analysis of epitaxial growth with reflectance-difference spectroscopy , 1995 .

[4]  Sakurai,et al.  Determination of the surface structures of the GaAs(001)-(2 x 4) As-rich phase. , 1995, Physical review. B, Condensed matter.

[5]  R. H. Williams,et al.  Surface processes before and during growth of GaAs (001) , 1994 .

[6]  Joyce,et al.  Arsenic-deficient GaAs(001)-(2 x 4) surfaces: Scanning-tunneling-microscopy evidence for locally disordered (1 x 2) Ga regions. , 1994, Physical review. B, Condensed matter.

[7]  Stephenson,et al.  GaAs c(4 x 4) surface structure in organometallic vapor-phase epitaxy. , 1994, Physical review. B, Condensed matter.

[8]  K. Ploog,et al.  Contribution of reflection high-energy electron diffraction to nanometre tailoring of surfaces and interfaces by molecular beam epitaxy , 1994 .

[9]  L. Florez,et al.  Relationship among reflectance‐difference spectroscopy, surface photoabsorption, and spectroellipsometry , 1993 .

[10]  W. H. Weinberg,et al.  Scanning tunneling microscopy of flat and vicinal molecular‐beam epitaxy grown GaAs(001)‐(2×4) surfaces: The effect of growth rate , 1993 .

[11]  W. Richter,et al.  GaAs surface control during metalorganic vapor phase epitaxy by reflectance anisotropy spectroscopy , 1993 .

[12]  Kamiya,et al.  Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum. , 1992, Physical review. B, Condensed matter.

[13]  Yia-Chung Chang,et al.  Optical anisotropy spectra of GaAs(001) surfaces , 1992 .

[14]  R. H. Williams,et al.  Analysis of molecular‐beam epitaxial growth of InAs on GaAs(100) by reflection anisotropy spectroscopy , 1992 .

[15]  L. Samuelson,et al.  Real-Time Monolayer Growth Oscillations Detected by RD at Pressures Up to LP-MOCVD , 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

[16]  J. R. Creighton,et al.  Formation of super'' As-rich GaAs(100) surfaces by high temperature exposure to arsine , 1992 .

[17]  O. Acher,et al.  In situ investigation of the low‐pressure metalorganic chemical vapor deposition of lattice‐mismatched semiconductors using reflectance anisotropy measurements , 1990 .

[18]  Yia-Chung Chang,et al.  Surface dielectric functions of (2×1) and (1×2) reconstructions of (001) GaAs surfaces , 1990 .

[19]  C. J. Palmstro,et al.  Reflection high energy electron diffraction characteristic absences in GaAs(100) (2×4)–As: A tool for determining the surface stoichiometry , 1990 .

[20]  Aspnes.  Optical response of microscopically rough surfaces. , 1990, Physical review. B, Condensed matter.

[21]  Northrup,et al.  Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy. , 1990, Physical review. B, Condensed matter.

[22]  A. A. Studna,et al.  Low-retardance fused-quartz window for real-time optical applications in ultrahigh vacuum , 1989 .

[23]  J. P. Harbison,et al.  Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxy , 1988 .

[24]  J. P. Harbison,et al.  Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs , 1988 .

[25]  P. J. Dobson,et al.  Dynamics of film growth of GaAs by MBE from Rheed observations , 1983 .

[26]  D. Aspnes.  Optical properties of thin films , 1982 .

[27]  J. Osborn.  Demagnetizing Factors of the General Ellipsoid , 1945 .