Power PiN diode model for PSPICE simulations

An accurate physics based model for power PiN diodes is derived and implemented as a subcircuit into the PSPICE circuit simulator. The model is based on an equivalent circuit representation of the base region, obtained by solving the ambipolar diffusion equation with the finite difference method. Good agreement is obtained by comparing the results of the proposed PiN diode model with experimental and simulated results taken from the literature

[1]  Holger Goebel,et al.  Power diode HYBRID model with forward and reverse recovery for use in circuit simulators , 1992, [Proceedings] APEC '92 Seventh Annual Applied Power Electronics Conference and Exposition.

[2]  G. Smith,et al.  Numerical Solution of Partial Differential Equations: Finite Difference Methods , 1978 .

[3]  H. Schlangenotto,et al.  Spatial composition and injection dependence of recombination in silicon power device structures , 1979, IEEE Transactions on Electron Devices.

[4]  H. Benda,et al.  Reverse recovery processes in silicon power rectifiers , 1967 .

[5]  Hans Jurgen Mattausch,et al.  Status and trends of power semiconductor device models for circuit simulation , 1998 .

[6]  Paolo Antognetti,et al.  Semiconductor Device Modeling with Spice , 1988 .

[7]  P. Leturcq,et al.  Implementation and validation of a new diode model for circuit simulation , 1996, PESC Record. 27th Annual IEEE Power Electronics Specialists Conference.

[8]  A. Araújo Modelação de semicondutores bipolares : formulação de um novo método para simulação em circuitos electrónicos de potência , 1998 .

[9]  T. Vogler,et al.  A new and accurate circuit-modelling approach for the power-diode , 1992, PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference.

[10]  A. Carvalho,et al.  Power p-i-n diode modeling using SPICE , 1997, ISIE '97 Proceeding of the IEEE International Symposium on Industrial Electronics.

[11]  Antonio G. M. Strollo,et al.  A new SPICE subcircuit model of power p-i-n diode , 1994 .