论文信息 - 1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications - 字舞流文

1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

Thomas Skotnicki | R. Bouchakour | Pascal Masson | Pascale Mazoyer | Sophie Puget | Germain Bossu | J.-M. Portal | F. Berthollet