Simulation of the Metal-Semiconductor-Metal photodetector based on InAlAs/GaAsSb for the photodetection at the wavelength 1.3 µm

In this paper we present the simulation of the planar Metal-Semiconductor-Metal photodetector (MSM-PD) of interdigitated structure based on InAlAs/GaAsSb adapted for photodetection at the wavelength 1.3 μm. We use theoretical models to plot the variations of the dark current, the photocurrent, the capacity, and the cut-off frequency of the photodetector as a function of bias voltage and the different geometrical parameters. The obtained results show a very low dark current of 30-100 pA, observed at the bias voltage of 10 V, this is mainly due to the introduction of a thin layer to increase the Schottky barrier, based on In0.52Al0.48As in the epitaxial structure of the component. The obtained photocurrent and cutoff frequencies are very appreciable, these latter exceed the value of 2 THz for a photodetector having an active surface of 1 × 1 μm2 and an interelectrode distance of 0.03 μm, and they are mainly limited by the transit time of the photo-generated carriers, given the low component capacity obtained by simulation.

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