Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes
暂无分享,去创建一个
Kyuho Cho | Thomas Mikolajick | Uwe Schroeder | Sebastian Schmelzer | Valeri Afanas'ev | Han-jin Lim | Ulrich Böttger | Steve Knebel | U. Böttger | V. Afanas’ev | T. Mikolajick | U. Schroeder | M. Pešić | S. Schmelzer | Hanjin Lim | C. Jung | S. Knebel | Milan Pešić | Jaewan Chang | Nadiia Kolomiiets | Maximilian Geyer | Changhwa Jung | N. Kolomiiets | Kyuho Cho | Jaewan Chang | M. Geyer
[1] Hongfa Luan,et al. On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics , 2006, IEEE Electron Device Letters.
[2] Albena Paskaleva,et al. Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes , 2013 .
[3] S.Y. Kim,et al. Fully Integrated 56 nm DRAM Technology for 1 Gb DRAM , 2007, 2007 IEEE Symposium on VLSI Technology.
[4] R. Fowler,et al. The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures , 1931 .
[5] A. Stesmans,et al. Photoconductivity of Hf-based binary metal oxide systems , 2008 .
[6] Kyuho Cho,et al. Conduction barrier offset engineering for DRAM capacitor scaling , 2016 .
[7] Paolo Lugli,et al. Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness , 2011 .
[8] K. Shiraishi,et al. Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- $k$ CMOSFETs , 2009, IEEE Electron Device Letters.
[9] J. Robertson. High dielectric constant gate oxides for metal oxide Si transistors , 2006 .
[10] L. Oberbeck,et al. SrTiO3 thin film capacitors on silicon substrates with insignificant interfacial passive layers , 2010 .
[11] C. Hwang,et al. Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film. , 2014, ACS applied materials & interfaces.
[12] Nicola A. Spaldin,et al. Origin of the dielectric dead layer in nanoscale capacitors , 2006, Nature.
[13] J. Frenkel,et al. On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors , 1938 .
[14] A. Stesmans,et al. Internal photoemission at interfaces of high-κ insulators with semiconductors and metals , 2007 .
[15] Kyuho Cho,et al. Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications , 2015 .
[16] H. Bender,et al. Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors , 2011 .
[17] Thomas Mikolajick,et al. Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors , 2014, IEEE Transactions on Device and Materials Reliability.
[18] C. Hwang,et al. Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode , 2011 .
[19] K. A. Nasyrov,et al. Charge transport in dielectrics via tunneling between traps , 2011 .
[20] S. Clima,et al. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory , 2014 .