Special Issue on “Recent Advances in Novel Materials for Future Spintronics”

A total of 23 manuscripts were received for our Special Issue (SI), of which 7 manuscripts were directly rejected without peer review. The remaining 16 articles were all strictly reviewed by no less than two reviewers in related fields. Finally, 13 of the manuscripts were recommended for acceptance and published in Applied Sciences-Basel. Referees from 10 different countries provided valuable suggestions for the manuscripts in our SI, the top five being the USA, Germany, Korea, Spain, and Finland. The names of these distinguished reviewers are listed in Table A1. We would like to thank all of these reviewers for their time and effort in reviewing the papers in our SI.

[1]  Y. J. Zhang,et al.  Tailoring structural and magnetic properties of Mn3−xFexGa alloys towards multifunctional applications , 2018, IUCrJ.

[2]  Strain-induced programmable half-metal and spin-gapless semiconductor in an edge-doped boron nitride nanoribbon , 2016, 1601.05010.

[3]  Ying Chen,et al.  Electronic and Magnetic Properties of Bulk and Monolayer CrSi2: A First-Principle Study , 2018, Applied Sciences.

[4]  R. Khenata,et al.  Search for a new member of parabolic-like spin-gapless semiconductors: The case of diamond-like quaternary compound CuMn2InSe4 , 2018, Results in Physics.

[5]  Ying Chen,et al.  Half-Metallicity and Magnetism of the Quaternary Heusler Compound TiZrCoIn1−xGex from the First-Principles Calculations , 2019, Applied Sciences.

[6]  Tingting Lin,et al.  The Electronic, Magnetic, Half-Metallic and Mechanical Properties of the Equiatomic Quaternary Heusler Compounds FeRhCrSi and FePdCrSi: A First-Principles Study , 2018, Applied Sciences.

[7]  L. Pereira.  Experimentally evaluating the origin of dilute magnetism in nanomaterials , 2017 .

[8]  Dianhui Wang,et al.  Electronic, Optical, Mechanical and Lattice Dynamical Properties of MgBi2O6: A First-Principles Study , 2019, Applied Sciences.

[9]  Zhenxiang Cheng,et al.  Strain-induced diverse transitions in physical nature in the newly designed inverse Heusler alloy Zr2MnAl , 2016 .

[10]  Chuan-Kun Zhang,et al.  First Principles Study on the Effect of Pressure on the Structure, Elasticity, and Magnetic Properties of Cubic GaFe(CN)6 Prussian Blue Analogue , 2019, Applied Sciences.

[11]  Zhenxiang Cheng,et al.  Rare earth-based quaternary Heusler compounds MCoVZ (M = Lu, Y; Z = Si, Ge) with tunable band characteristics for potential spintronic applications , 2017, IUCrJ.

[12]  Yu Feng,et al.  Interface Characterization of Current-Perpendicular-to-Plane Spin Valves Based on Spin Gapless Semiconductor Mn2CoAl , 2018, Applied Sciences.

[13]  Dianhui Wang,et al.  First-Principles Investigation of Atomic Hydrogen Adsorption and Diffusion on/into Mo-doped Nb (100) Surface , 2018, Applied Sciences.

[14]  Zhenxiang Cheng,et al.  Lattice constant changes leading to significant changes of the spin-gapless features and physical nature in a inverse Heusler compound Zr2MnGa , 2017 .

[15]  Lei Shen,et al.  Robust two-dimensional bipolar magnetic semiconductors by defect engineering , 2018 .

[16]  Stuart S. P. Parkin,et al.  Heusler compounds with perpendicular magnetic anisotropy and large tunneling magnetoresistance , 2017 .

[17]  S. K. Bose,et al.  4-d magnetism: Electronic structure and magnetism of some Mo-based alloys , 2017 .

[18]  S. Azam,et al.  Spin Gapless Semiconductor–Nonmagnetic Semiconductor Transitions in Fe-Doped Ti2CoSi: First-Principle Calculations , 2018, Applied Sciences.

[19]  Xiao Zheng,et al.  First-Principles Prediction of Skyrmionic Phase Behavior in GdFe2 Films Capped by 4d and 5d Transition Metals , 2019, Applied Sciences.

[20]  Stuart S. P. Parkin,et al.  Origin of the Tetragonal Ground State of Heusler Compounds , 2017 .

[21]  Z. H. Liu,et al.  Towards fully compensated ferrimagnetic spin gapless semiconductors for spintronic applications , 2015 .

[22]  A. Benyoussef,et al.  Magnetic properties of vanadium doped CdTe: Ab initio calculations , 2017 .

[23]  Zhenxiang Cheng,et al.  Recent advances in the Heusler based spin-gapless semiconductors , 2016 .

[24]  Xiaotian Wang,et al.  Recent advances in Dirac spin-gapless semiconductors , 2018, Applied Physics Reviews.

[25]  Bo Wu,et al.  Structure, Magnetism, and Electronic Properties of Inverse Heusler Alloy Ti2CoAl/MgO(100) Herterojuction: The Role of Interfaces , 2018, Applied Sciences.

[26]  S. Du,et al.  Bipolar magnetic semiconductors among intermediate states during the conversion from Sc2C(OH)2 to Sc2CO2 MXene. , 2018, Nanoscale.

[27]  Zhenxiang Cheng,et al.  A first-principle investigation of spin-gapless semiconductivity, half-metallicity, and fully-compensated ferrimagnetism property in Mn2ZnMg inverse Heusler compound , 2017 .

[28]  R. Farghadan.  Bipolar magnetic semiconductor in silicene nanoribbons , 2017 .

[29]  Kailun Yao,et al.  Monolayer MXenes: promising half-metals and spin gapless semiconductors. , 2016, Nanoscale.

[30]  Enamullah,et al.  Competing magnetic and spin-gapless semiconducting behavior in fully compensated ferrimagnetic CrVTiAl: Theory and experiment , 2017, 1707.04854.

[31]  A. Du,et al.  Rhombohedral Lanthanum Manganite: A New Class of Dirac Half-Metal with Promising Potential in Spintronics. , 2018, ACS Applied Materials and Interfaces.

[32]  Xiaolin Wang,et al.  Proposal for a new class of materials: spin gapless semiconductors. , 2008, Physical review letters.

[33]  J. Bell,et al.  First-Principles Prediction of Spin-Polarized Multiple Dirac Rings in Manganese Fluoride. , 2017, Physical review letters.

[34]  C. Felser,et al.  Mn2PtIn: A tetragonal Heusler compound with exchange bias behavior , 2012 .

[35]  Zongbin Chen,et al.  Strain Control of the Tunable Physical Nature of a Newly Designed Quaternary Spintronic Heusler Compound ScFeRhP , 2018, Applied Sciences.

[36]  C. Friedrich,et al.  A first-principles DFT+ GW study of spin-filter and spin-gapless semiconducting Heusler compounds , 2017, 1703.02142.

[37]  Zhenxiang Cheng,et al.  Site preference and tetragonal distortion in palladium-rich Heusler alloys , 2019, IUCrJ.

[38]  Qiang Gao,et al.  High-throughput screening for spin-gapless semiconductors in quaternary Heusler compounds , 2018, Physical Review Materials.

[39]  Wenbin Liu,et al.  Theoretical Investigations on the Mechanical, Magneto-Electronic Properties and Half-Metallic Characteristics of ZrRhTiZ (Z = Al, Ga) Quaternary Heusler Compounds , 2019, Applied Sciences.

[40]  Wenbin Liu,et al.  Phase Stability and Magnetic Properties of Mn3Z (Z = Al, Ga, In, Tl, Ge, Sn, Pb) Heusler Alloys , 2019, Applied Sciences.