Hole tunneling times in GaAs/AlAs double‐barrier structures

We have calculated hole tunneling times in GaAs/AlAs double‐barrier structures taking quantum well band‐mixing effects into account. Our results indicate that for sufficiently high hole temperatures and concentrations, band‐mixing effects reduce average hole tunneling times from the pure heavy hole value to values comparable to electron tunneling times in the same structure. For very low hole temperatures and concentrations, band mixing is less important and average hole tunneling times should approach the pure heavy hole value. These results provide an explanation for previously reported experimental results in which electrons and holes were found to be characterized by very similar tunneling times.

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