The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

The energy fine structure, corresponding to different nitrogen nearest-neighbor environments, was observed in contactless electroreflectance (CER) spectra of as-grown GaInNAs quantum wells (QWs) obtained at various As/III pressure ratios. In the spectral range of the fundamental transition, two CER resonances were detected for samples grown at low As pressures whereas only one CER resonance was observed for samples obtained at higher As pressures. This resonance corresponds to the most favorable nitrogen nearest-neighbor environment in terms of the total crystal energy. It means that the nitrogen nearest-neighbor environment in GaInNAs QWs can be controlled in molecular beam epitaxy process by As/III pressure ratio.

[1]  David E. Aspnes,et al.  Third-derivative modulation spectroscopy with low-field electroreflectance , 1973 .

[2]  S. Kurtz,et al.  Structural changes during annealing of GaInAsN , 2001 .

[3]  J. Harris,et al.  Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy. , 2003, Physical review letters.

[4]  K. Köhler,et al.  N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering , 2001 .

[5]  Takeshi Kitatani,et al.  GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance , 1996 .

[6]  Wolfgang Stolz,et al.  (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen , 2001 .

[7]  J. Rorison,et al.  Optical transitions in GaInNAs'GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy , 2003 .

[8]  John F. Klem,et al.  Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy , 2002 .

[9]  M. Albrecht,et al.  Compositional correlation and anticorrelation in quaternary alloys: competition between bulk thermodynamics and surface kinetics. , 2007, Physical Review Letters.

[10]  A. Forchel,et al.  Explanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells , 2003 .

[11]  A. Zunger,et al.  Spatial correlations in GaInAsN alloys and their effects on band-gap enhancement and electron localization. , 2001, Physical review letters.

[12]  J. Harris,et al.  Contactless electroreflectance of GaInNAsSb/GaAs single quantum wells with indium content of 8%-32% , 2007 .

[13]  M. Kudo,et al.  Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAs , 2001 .

[14]  J. Misiewicz,et al.  Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations. , 2009, The Review of scientific instruments.

[15]  C. S. Peng,et al.  Postgrowth annealing of GaInAs∕GaAs and GaInAsN∕GaAs quantum well samples placed in a proximity GaAs box: A simple method to improve the crystalline quality , 2008 .

[16]  Janne Konttinen,et al.  Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs , 2004 .