论文信息 - Co-integration of resonant tunneling and double heterojunction bipolar transistors on InP

Co-integration of resonant tunneling and double heterojunction bipolar transistors on InP

The authors report the first co-integration of resonant tunneling and heterojunction bipolar transistors. Both transistors are produced from a single epitaxial growth by metalorganic molecular beam epitaxy, on InP substrates. The fabrication process yields 9- mu m/sup 2/-emitter resonant tunneling bipolar transistors (RTBTs) operating at room temperature with peak-to-valley current ratios (PVRs) in the common-emitter transistor configuration, exceeding 70, at a resonant peak current density of 10 kA/cm/sup 2/, and a differential current gain at resonance of 19. The breakdown voltage of the In/sub 0.53/Ga/sub 0.47/As-InP base/collector junction, V/sub CBO/, is 4.2 V, which is sufficient for logic function demonstrations. Co-integrated 9- mu m/sup 2/-emitter double heterojunction bipolar transistors (DHBTs) with low collector/emitter offset voltage, 200 mV, and DC current gain as high as 32 are also obtained. On-wafer S-parameter measurements of the current gain cutoff frequency (f/sub T/) and the maximum frequency of oscillation (f/sub max/) yielded f/sub T/ and f/sub max/ values of 11 and 21 GHz for the RTBT and 59 and 43 GHz for the HBT, respectively.<<ETX>>

[1] S. Sen,et al. Microwave multiple-state resonant tunneling bipolar transistors , 1989, IEEE Electron Device Letters.

[2] J. Luscombe,et al. Resonant-Tunneling Transistors , 1993 .

[3] Federico Capasso,et al. Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunneling , 1988 .

[4] E. A. Beam,et al. Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits , 1993 .

[5] 稲井基彦. Quantum effect devices , 1994 .

[6] A. Seabaugh,et al. The Use of Tertiarybutylphosphine and Tertiarybutylarsine for the Metalorganic Molecular Beam Epitaxial Growth of Resonant Tunneung Devices , 1991 .

[7] N. Yokoyama,et al. Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures , 1989 .

[8] Lutz J. Micheel,et al. Multiple-valued logic computation circuits using micro- and nanoelectronic devices , 1993, [1993] Proceedings of the Twenty-Third International Symposium on Multiple-Valued Logic.

[9] D. C. Liou,et al. Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors , 1991 .

[10] Hybrid RBT with resonant-tunneling-diode and hetero-bipolar-transistor on InP substrate , 1992, 1992 International Technical Digest on Electron Devices Meeting.