论文信息 - Device-circuit co-design for high performance level shifter by limiting quasi-saturation effects in advanced DeMOS transistors

Device-circuit co-design for high performance level shifter by limiting quasi-saturation effects in advanced DeMOS transistors

This paper presents a device-circuit co-design methodology for a DeMOS 5V GHz-speed high voltage level shifter. The limiting quasi-saturation effect is addressed by a codesign methodology. The co-design methodology is applied to the STI-DeMOS in a calibrated setup using experimental data. As a result, a 15% improvement in the speed is achieved for a high-performance level shifter circuit.

Maryam Shojaei Baghini | Harald Gossner | Mayank Shrivastava | V. Ramgopal Rao | Peeyusha Saurabha Swain

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