Recent advances in 3D VLSI integration

This work highlights recent advances in 3D VLSI integration. A review of low temperature process modules development such as junctions, spacers and salicidation is presented. Finally, for the first time, a full CMOS over CMOS 3D VLSI integration on 300mm wafers is demonstrated with a top level compatible with state of the art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or raised source and drain.