A simple system for on-die measurement of atto-Farad capacitance
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Charge Injection Error Free (CIEF) Charge-Base Capacitance Measurement (CBCM) technique provides a simple way for accurate measurements of on-chip interconnect parasitic capacitance. We report here for the first time capacitance measurements of on-chip interconnect with resolution values of 1aF or better. We analyze the setup requirements to allow such capability, and show stable coupling capacitance measurement results at the 1aF resolution.
[1] Yao-Wen Chang,et al. Charge-based capacitance measurement for bias-dependent capacitance , 2006 .
[2] J.C. Chen,et al. A simple method for on-chip, sub-femto Farad interconnect capacitance measurement , 1997, IEEE Electron Device Letters.
[4] Li Song,et al. Atto-farad measurement and modeling of on-chip coupling capacitance , 2004, IEEE Electron Device Letters.
[5] N. Singh,et al. Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique , 2009, IEEE Electron Device Letters.