论文信息 - Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate - 字舞流文

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

Y. Cordier | V. Hoel | F. Lecourt | A. Cutivet | J. De Jaeger | S. Rennesson | N. Defrance | E. Okada | M. Lesecq | P. Altuntas | A. Agboton