Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
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E. Vogel | W. J. Ready | G. Pavlidis | S. Graham | M. Tsai | A. Tarasov | P. M. Campbell | C. A. Joiner | C. Joiner
暂无分享,去创建一个
E. Vogel | W. J. Ready | G. Pavlidis | S. Graham | M. Tsai | A. Tarasov | P. M. Campbell | C. A. Joiner | C. Joiner