Electron-beam dissociation of the MgH complex in p-type GaN

The dissociation of the MgH complex in GaN under low-energy electron-beam irradiation (LEEBI) and its reassociation during postirradiation annealing were measured using infrared vibration spectroscopy. The dissociation rate exhibits a pronounced dependence on the H isotope, being about 4 times greater for protium than deuterium. Reassociation occurs at temperatures <200 °C, which may be problematic for device applications of LEEBI. We consider possible reaction paths based on atomic configurations from density-functional theory and bond-excitation mechanisms investigated in surface-desorption studies, thereby arriving at a model of the evolution consistent with the experimental results.

[1]  B. Vaandrager,et al.  Isotope effects on the rate of electron-beam dissociation of Mg-H complexes in GaN , 2002 .

[2]  Alan Francis Wright,et al.  Theoretical description of H behavior in GaN p-n junctions , 2001 .

[3]  N. Tolk,et al.  Absolute total cross sections for electron-stimulated desorption of hydrogen and deuterium from silicon(111) measured by second harmonic generation , 2000 .

[4]  S. Silvestre,et al.  Electron-beam-induced reactivation of Si dopants in hydrogenated GaAs: A minority carrier generation effect or an energetic electron excitation effect? , 2000 .

[5]  William R. Wampler,et al.  Equilibrium state of hydrogen in gallium nitride: Theory and experiment , 2000 .

[6]  C. Naud,et al.  Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light , 2000 .

[7]  R. Pritchard,et al.  Dipole moments of H 2 , D 2 , and HD molecules in Czochralski silicon , 1999 .

[8]  H. Ota,et al.  GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection , 1999 .

[9]  A. Wickenden,et al.  Efficient electron-stimulated desorption of hydrogen from GaN(0001) , 1999 .

[10]  E. Constant,et al.  Isotope effect on the reactivation of neutralized Si dopants in hydrogenated or deuterated GaAs: The role of hot electrons , 1999 .

[11]  A. F. Wright Influence of crystal structure on the lattice sites and formation energies of hydrogen in wurtzite and zinc-blende GaN , 1999 .

[12]  L. Register,et al.  Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime , 1998 .

[13]  Hiroyuki Ota,et al.  The activation of Mg in GaN by annealing with minority-carrier injection , 1998 .

[14]  Karl Hess,et al.  Ultrahigh vacuum–scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor technology , 1998 .

[15]  Eugene E. Haller,et al.  Local vibrational modes of the Mg–H acceptor complex in GaN , 1996 .

[16]  James J. Coleman,et al.  Time‐dependent study of low energy electron beam irradiation of Mg‐doped GaN grown by metalorganic chemical vapor deposition , 1996 .

[17]  S. G. Bishop,et al.  Effect of e‐beam irradiation on a p‐n junction GaN light emitting diode , 1996 .

[18]  S. Pearton,et al.  Minority‐carrier‐enhanced reactivation of hydrogen‐passivated Mg in GaN , 1996 .

[19]  K. Hess,et al.  Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing , 1996 .

[20]  Van de Walle CG,et al.  Hydrogen in GaN: Novel aspects of a common impurity. , 1995, Physical review letters.

[21]  J R Tucker,et al.  Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms , 1995, Science.

[22]  H. Amano,et al.  Direct Patterning of the Current Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment , 1995 .

[23]  R. Anderson,et al.  Two-step debonding of hydrogen from boron acceptors in silicon , 1991 .

[24]  H. Amano,et al.  P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) , 1989 .

[25]  T. E. Everhart,et al.  Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials , 1971 .

[26]  R. Gomer,et al.  Desorption from Metal Surfaces by Low‐Energy Electrons , 1964 .

[27]  Frank S. Ham,et al.  Theory of diffusion-limited precipitation , 1958 .

[28]  D. Vanderbilt,et al.  Hydrogen, acceptors, and H-acceptor complexes in GaN , 1995 .