A Low-Noise CMOS Distributed Amplifier for Ultra-Wide-Band Applications

To employ the distributed amplification technique for the design of ultra-wide-band low-noise amplifiers, the poor noise performance of the conventional distributed amplifiers (DAs) needs to be improved. In this work, the terminating resistor of the gate transmission line, a main contributor to the overall DA's noise figure, is replaced with a resistive-inductive network. The proposed terminating network creates an intentional mismatch to reduce the noise contribution of the terminating network. The degraded input matching at low frequencies can be tolerated for ultra-wide-band applications as they need to operate above 3 GHz. Implemented in a 0.13 mum CMOS process, the proposed DA achieves a flat gain of 12 dB with an average noise figure of 3.3 dB over the 3- to 9.4-GHz band, the best reported noise performance for a CMOS DA in the literature. The amplifier dissipates 30 mW from two 0.6-V and 1-V dc power supplies.

[1]  Y.M.M. Antar,et al.  Performance of 1-10-GHz traveling wave amplifiers in 0.18-μm CMOS , 2002, IEEE Microwave and Wireless Components Letters.

[2]  D. J. Allstot,et al.  A 0.5-8.5 GHz fully differential CMOS distributed amplifier , 2002 .

[3]  H. Shigematsu,et al.  4 40 Gb / s CMOS Distributed Amplifier for Fiber-Optic Communication Systems , 2001 .

[4]  M. Rodwell,et al.  40Gb/s CMOS distributed amplifier for fiber-optic communication systems , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[5]  A.A. Abidi,et al.  A 3-10-GHz low-noise amplifier with wideband LC-ladder matching network , 2004, IEEE Journal of Solid-State Circuits.

[6]  N.G. Tarr,et al.  A 27 GHz fully integrated CMOS distributed amplifier using coplanar waveguides , 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

[7]  Walter H. Ku,et al.  An integrated CMOS distributed amplifier utilizing packaging inductance , 1997 .

[8]  Liang-Hung Lu,et al.  A 32-GHz non-uniform distributed amplifier in 0.18-/spl mu/m CMOS , 2005 .

[9]  Thomas H. Lee,et al.  The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .

[10]  Shen-Iuan Liu,et al.  An Ultra-Wide-Band 0.4–10-GHz LNA in 0.18-$\mu$m CMOS , 2007, IEEE Transactions on Circuits and Systems II: Express Briefs.

[11]  Kuo-Liang Deng,et al.  A 0.5-14-GHz 10.6-dB CMOS cascode distributed amplifier , 2003, 2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408).

[12]  Huei Wang,et al.  A miniature 25-GHz 9-dB CMOS cascaded single-stage distributed amplifier , 2004, IEEE Microwave and Wireless Components Letters.

[13]  Tao Wang,et al.  A micromachined CMOS distributed amplifier by CMOS compatible ICP deep-trench technology , 2006 .

[14]  Kuo-Liang Deng,et al.  A 0.6-22-GHz broadband CMOS distributed amplifier , 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

[15]  J. E. Sitch,et al.  Noise figure of m.e.s.f.e.t.s , 1980 .

[16]  D. J. Allstot,et al.  A fully integrated 0.5-5.5 GHz CMOS distributed amplifier , 2000 .

[17]  C. S. Aitchison,et al.  The Intrinsic Noise Figure of the MESFET Distributed Amplifier , 1985 .

[18]  B. Kleveland,et al.  Monolithic CMOS distributed amplifier and oscillator , 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

[19]  T. Lee,et al.  A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996 .

[20]  To-Po Wang,et al.  An 80GHz travelling-wave amplifier in a 90nm CMOS technology , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

[21]  Huei Wang,et al.  A 70GHz cascaded multi-stage distributed amplifier in 90nm CMOS technology , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

[22]  A. Bevilacqua,et al.  An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers , 2004, IEEE Journal of Solid-State Circuits.