Assessment of selected materials and assembly technologies for power electronics modules with the capability to operate at high temperatures

Wide-band gap semiconductors allow operation of power electronics at considerably higher temperatures than Si-devices. However, a significant improvement of a power module temperature capability is necessary to fully exploit this benefit. For this reason reliability of various ceramic substrates undergoing liquid-liquid thermal shock cycling -50-190°C was tested. Additionally, an impact of the large temperature-span shock cycling on module assembly technologies was studied with focus on Ag-sintering. The benchmarked DUTs were mainly investigated using scanning acoustic microscopy, scanning electron microscopy and laser profilometry. The obtained results were compared with performance of CTE optimized double-side cooled module prototypes. Data presented in this paper extend already published information. For example, the sintered bond of a SiC diode and an AlN/Al substrate was more robust against cycling than the bond of a SiC diode and a Si3N4/Cu substrate. On the other hand, Si3N4/Cu substrates were significantly more robust than AlN/Al substrates. It was also observed that roughening of Al-metallization can be strongly modified by adding of additional elements. CTE optimized double-side cooled modules were showing high reliability of interconnections; however, a different failure mode - cracking of semiconductor chips was seen.

[1]  T. Chow,et al.  Silicon carbide benefits and advantages for power electronics circuits and systems , 2002, Proc. IEEE.

[2]  Matthias Petzold,et al.  Ceramic substrates with aluminum metallization for power application , 2010, 3rd Electronics System Integration Technology Conference ESTC.

[3]  A. Lindemann,et al.  Properties of Direct Aluminum Bonded Substrates for Power Semiconductor Components , 2007, IEEE Transactions on Power Electronics.

[4]  E. Santi,et al.  An assessment of wide bandgap semiconductors for power devices , 2003 .

[5]  S. Kicin,et al.  Low-Voltage AC Drive Based on Double-Sided Cooled IGBT Press-Pack Modules , 2012, IEEE Transactions on Industry Applications.

[6]  D.C. Katsis,et al.  Development of an extreme temperature range silicon carbide power module for aerospace applications , 2008, 2008 IEEE Power Electronics Specialists Conference.

[7]  Cyril Buttay,et al.  High-temperature behavior of SiC power diodes , 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

[8]  R. Campbell,et al.  High Temperature Electronics. , 1971 .

[9]  B. Chiou,et al.  Wettability of electroless Ni in the under bump metallurgy with lead free solder , 2001 .

[10]  Jianmin Qu,et al.  Interfacial Versus Cohesive Failure on Polymer-Metal Interfaces in Electronic Packaging—Effects of Interface Roughness , 2002 .

[11]  F. Wang,et al.  Survey on High-Temperature Packaging Materials for SiC-Based Power Electronics Modules , 2007, 2007 IEEE Power Electronics Specialists Conference.

[12]  Andreas Schletz,et al.  Reliability of insulating substrates — High temperature power electronics for more electric aircraft , 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

[13]  K.D.T. Ngo,et al.  Effects of Large-Temperature Cycling Range on Direct Bond Aluminum Substrate , 2009, IEEE Transactions on Device and Materials Reliability.