Optical gain characteristics of staggered InGaN quantum wells lasers
暂无分享,去创建一个
[1] Yik-Khoon Ee,et al. Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes , 2009, IEEE Journal of Quantum Electronics.
[2] Z. J. Yang,et al. Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field , 2009 .
[3] Ronald A. Arif,et al. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes , 2007 .
[4] James S. Speck,et al. Nonpolar InxGa1-xN/GaN(1(1)over-bar00) multiple quantum wells grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy , 2003 .
[5] Paolo Lugli,et al. Many-body effects on excitons properties in GaN/AlGaN quantum wells , 2000 .
[6] Ronald A. Arif,et al. Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm , 2008, 2007 International Conference on Numerical Simulation of Optoelectronic Devices.
[7] Yoichi Kawakami,et al. Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer , 2006 .
[8] Takashi Mukai,et al. Blue InGaN-based laser diodes with an emission wavelength of 450 nm , 2000 .
[9] Seoung-Hwan Park,et al. Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency , 2009 .
[10] U. Schwarz,et al. Nitride Semiconductor Devices , 2007 .
[11] Hiroaki Ohta,et al. Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes , 2007 .
[12] Ronald A. Arif,et al. Type-II InGaN-GaNAs quantum wells for lasers applications , 2008 .
[13] Hans Christian Schneider,et al. Contributions to the large blue emission shift in a GaAsSb type-II laser , 2001 .
[14] S. Lutgen,et al. On the importance of radiative and Auger losses in GaN-based quantum wells , 2008 .
[15] Hongping Zhao,et al. Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm , 2009, IEEE Journal of Selected Topics in Quantum Electronics.
[16] Weng W. Chow,et al. Laser gain properties of AlGaN quantum wells , 2005 .
[17] Shun Lien Chuang,et al. A band-structure model of strained quantum-well wurtzite semiconductors , 1997 .
[18] Shun Lien Chuang,et al. Physics of Photonic Devices , 2009 .
[19] Y. Kuo,et al. Improvement in piezoelectric effect of violet InGaN laser diodes , 2008 .
[20] P. Blood,et al. Time Evolution of the Screening of Piezoelectric Fields in InGaN Quantum Wells , 2005, IEEE Journal of Quantum Electronics.
[21] H. Ryu,et al. High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers , 2007, IEEE Photonics Technology Letters.
[22] S. Chuang,et al. Electronic and Optical Properties of ${\rm a}$- and ${\rm m}$-Plane Wurtzite InGaN–GaN Quantum Wells , 2007, IEEE Journal of Quantum Electronics.
[23] N. Tansu,et al. Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420–510 nm , 2008 .
[24] A. Andreev,et al. Calculation of electric field and optical transitions in InGaN∕GaN quantum wells , 2005 .
[25] Nelson Tansu,et al. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile , 2009 .
[26] Andreas Breidenassel,et al. 500 nm electrically driven InGaN based laser diodes , 2009 .
[27] R. Martin,et al. Electronic Structure: Basic Theory and Practical Methods , 2004 .
[28] Seoung-Hwan Park,et al. Electronic and optical properties of staggered InGaN/InGaN quantum‐well light‐emitting diodes , 2009 .
[29] Shun Lien Chuang,et al. Optical gain of strained wurtzite GaN quantum-well lasers , 1996 .
[30] C. Walle,et al. First-principles calculations for defects and impurities: Applications to III-nitrides , 2004 .
[31] Jack Dongarra,et al. NanoPSE: Nanoscience Problem Solving Environment for atomistic electronic structure of semiconductor nanostructures , 2005 .
[32] Nelson Tansu,et al. Current injection efficiency of InGaAsN quantum-well lasers , 2005 .
[33] Yik-Khoon Ee,et al. Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes , 2008, IEEE Journal of Quantum Electronics.
[34] James S. Speck,et al. Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak , 2004 .
[35] Zhiping Yu,et al. Atomistic Approach to Thickness-Dependent Bandstructure Calculation of InSb UTB , 2007, IEEE Transactions on Nanotechnology.
[36] Takashi Miyoshi,et al. 510–515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate , 2009 .
[37] Hyun-Surk Kim,et al. Highly stable temperature characteristics of InGaN blue laser diodes , 2006 .
[38] Euijoon Yoon,et al. Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer , 2007 .
[39] K. Delaney,et al. Auger recombination rates in nitrides from first principles , 2009, 0904.3559.
[40] Ronald A. Arif,et al. Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers , 2008 .
[41] J. Piprek. Nitride semiconductor devices : principles and simulation , 2007 .
[42] W. Chow,et al. Quantum Well Width Dependence of Threshold Current Density in InGaN Lasers , 1999 .
[43] Nelson Tansu,et al. Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm , 2003 .
[44] Seoung-Hwan Park,et al. High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes , 2009 .
[45] Jerry R. Meyer,et al. Band parameters for nitrogen-containing semiconductors , 2003 .
[46] Y.-C. Hsu,et al. Structure asymmetry effects in the optical gain of piezostrained InGaN quantum wells , 1999 .
[47] Michael R. Krames,et al. Auger recombination in InGaN measured by photoluminescence , 2007 .
[48] Ronald A. Arif,et al. Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime , 2009 .
[49] Richard M. Martin. Electronic Structure: Frontmatter , 2004 .