Site-Selective Epitaxy of Graphene on Si Wafers
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Hirokazu Fukidome | Yusuke Kawai | Hiroyuki Handa | Hiroki Hibino | Hidetoshi Miyashita | Masato Kotsugi | Takuo Ohkochi | Myung-Ho Jung | Tetsuya Suemitsu | Toyohiko Kinoshita | Taiichi Otsuji | Maki Suemitsu | H. Handa | H. Fukidome | M. Suemitsu | H. Miyashita | T. Otsuji | T. Suemitsu | Y. Kawai | H. Hibino | M. Kotsugi | T. Ohkochi | M. Jung | T. Kinoshita
[1] Kenji Suzuki,et al. An XAFS study of the poly-carbosilane conversion to SixC1−x , 1994 .
[2] Wei Chen,et al. Disorder beneath epitaxial graphene on SiC(0001): An x-ray absorption study , 2008 .
[3] Jun Fujii,et al. Graphene synthesis on cubic SiC/Si wafers. perspectives for mass production of graphene-based electronic devices. , 2010, Nano letters.
[4] Wei Chen,et al. Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure , 2009 .
[5] F. Tuinstra,et al. Raman Spectrum of Graphite , 1970 .
[6] J. E. Crombeen,et al. LEED and Auger electron observations of the SiC(0001) surface , 1975 .
[7] M. Dresselhaus,et al. Studying disorder in graphite-based systems by Raman spectroscopy. , 2007, Physical chemistry chemical physics : PCCP.
[8] Andre K. Geim,et al. Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.
[9] J. Moon,et al. Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers , 2010, IEEE Electron Device Letters.
[10] Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process , 2011 .
[11] Hirokazu Fukidome,et al. Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials , 2011 .
[12] M. Suemitsu,et al. Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane , 2007 .
[13] A. Ferrari,et al. Graphene Photonics and Optoelectroncs , 2010, CLEO 2012.
[14] R. Takahashi,et al. Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate , 2011 .
[15] C. Berger,et al. First direct observation of a nearly ideal graphene band structure. , 2009, Physical review letters.
[16] H. Handa,et al. Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate , 2009 .
[17] Hirokazu Fukidome,et al. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111) , 2010, Nanoscale research letters.
[18] Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates , 2012 .
[19] W. D. de Heer,et al. The growth and morphology of epitaxial multilayer graphene , 2008 .
[20] Hirokazu Fukidome,et al. Epitaxial Growth Processes of Graphene on Silicon Substrates , 2010 .
[21] H. Handa,et al. Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications , 2011 .
[22] Hirokazu Fukidome,et al. Epitaxial graphene top-gate FETs on silicon substrates , 2009, 2009 International Semiconductor Device Research Symposium.
[23] A. M. van der Zande,et al. Chemical vapor deposition-derived graphene with electrical performance of exfoliated graphene. , 2012, Nano letters.
[24] M. Nagase,et al. Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface , 2011 .
[25] M. Choe,et al. Thermal stability of multilayer graphene films synthesized by chemical vapor deposition and stained by metallic impurities , 2012, Nanotechnology.
[26] Hirokazu Fukidome,et al. Precise control of epitaxy of graphene by microfabricating SiC substrate , 2012 .
[27] I. Shimoyama,et al. Structures of sub-monolayered silicon carbide films , 2004 .
[28] M. Suemitsu,et al. Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer , 2003 .
[29] F. Guinea,et al. The electronic properties of graphene , 2007, Reviews of Modern Physics.
[30] H. Handa,et al. Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device , 2011 .
[31] Andre K. Geim,et al. Raman spectrum of graphene and graphene layers. , 2006, Physical review letters.
[32] S. Abe,et al. High-Frequency Coherent Phonons in Graphene on Silicon , 2011 .
[33] W. D. de Heer,et al. Observing the Quantization of Zero Mass Carriers in Graphene , 2009, Science.
[34] A. Geim,et al. Graphene Spin Valve Devices , 2006, IEEE Transactions on Magnetics.
[35] Herbert A. Will,et al. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices , 1983 .
[36] R. Takahashi,et al. Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations , 2011 .
[37] A. Ouerghi,et al. Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111) , 2010 .
[38] J.-M. Themlin,et al. HETEROEPITAXIAL GRAPHITE ON 6H-SIC(0001): INTERFACE FORMATION THROUGH CONDUCTION-BAND ELECTRONIC STRUCTURE , 1998 .
[39] C. Berger,et al. Why multilayer graphene on 4H-SiC(0001[over ]) behaves like a single sheet of graphene. , 2008, Physical review letters.
[40] S. Banerjee,et al. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils , 2009, Science.
[41] J. Penuelas,et al. Epitaxial graphene on cubic SiC(111)Si(111) substrate. , 2010, Applied physics letters.
[42] F. Reidinger,et al. Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition , 1992 .
[43] Maki Suemitsu,et al. Graphene formation on a 3C-SiC(111) thin film grown on Si(110) substrate , 2009 .
[44] H. Fukidome,et al. Epitaxial graphene on silicon substrates , 2010 .
[45] C. Dimitrakopoulos,et al. Wafer-Scale Graphene Integrated Circuit , 2011, Science.
[46] Kwang S. Kim,et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. , 2010, Nature nanotechnology.
[47] R. Takahashi,et al. Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si , 2011 .
[48] C. Dimitrakopoulos,et al. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene , 2010, Science.
[49] Pinshane Y. Huang,et al. Twinning and twisting of tri- and bilayer graphene. , 2012, Nano letters.
[50] H. Handa,et al. Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate , 2010 .
[51] Carl W. Magnuson,et al. Graphene films with large domain size by a two-step chemical vapor deposition process. , 2010, Nano letters (Print).
[52] M. Dresselhaus,et al. Raman spectroscopy in graphene , 2009 .
[53] A. Ouerghi,et al. Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties , 2010 .
[54] R. Kaplan. Surface structure and composition of β- and 6H-SiC , 1989 .
[55] H. B. Weber,et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. , 2009, Nature materials.
[56] Epitaxial Graphene on Si(111) Substrate Grown by Annealing 3C-SiC/Carbonized Silicon , 2012 .
[57] H. Handa,et al. Epitaxial graphene field effect transistors on silicon substrates , 2009, 2009 Proceedings of the European Solid State Device Research Conference.
[58] R. Kuroda,et al. Revolutional Progress of Silicon Technologies Exhibiting Very High Speed Performance Over a 50-GHz Clock Rate , 2007, IEEE Transactions on Electron Devices.
[59] K. Emtsev,et al. Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study , 2008 .
[60] U. Starke,et al. Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation , 2009 .
[61] Taisuke Ohta,et al. Symmetry breaking in few layer graphene films , 2007, 0705.3705.
[62] S. Pei,et al. Substrate Hybridization and Rippling of Graphene Evidenced by Near-Edge X-ray Absorption Fine Structure Spectroscopy , 2010 .