论文信息 - MOVPE grown Ga1−xInxAs solar cells for GaInP/GaInAs tandem applications

MOVPE grown Ga1−xInxAs solar cells for GaInP/GaInAs tandem applications

Lattice-mismatched Ga1−xInxAs solar cells with an absorption edge between 900 and 1150 nm have been grown on GaAs substrates. Different graded Ga1−xInxAs buffer layers and solar cell structures were evaluated to achieve a good electrical performance of the device. External quantum efficiencies comparable to our best GaAs solar cells were measured. The best 1 cm2 cell with a bandgap energy of 1.18 eV has an efficiency of 22.6% at AM1.5g and a short circuit current density of 36.4 mA/cm2. To our knowledge, this is the highest reported efficiency for a Ga0.83In0.17As solar cell.

[1] K. M. Jones,et al. Development of high-quantum-efficiency, lattice-mismatched, 1.0-eV GaInAs solar cells , 1993 .

[2] M. Ludowise,et al. High‐efficiency (21.4%) Ga0.75In0.25As/GaAs (Eg=1.15 eV) concentrator solar cells and the influence of lattice mismatch on performance , 1983 .

[3] F. Yamaguchi,et al. Crystal lattice quantum computer , 1999 .

[4] Eric Daniel Jones,et al. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs , 1999 .

[5] Daniel J. Friedman,et al. Photocurrent of 1 eV GaInNAs lattice-matched to GaAs , 1998 .

[6] Keiji Tanaka. Electron beam induced reliefs in chalcogenide glasses , 1997 .

[7] M. Yamaguchi. Radiation resistance of compound semiconductor solar cells , 1995 .

[8] Hiroshi Kurita,et al. Over 30% efficient InGaP/GaAs tandem solar cells , 1997 .

[9] I. Suemune,et al. Band gap energy of GaNAs grown on GaAs(0 0 1) substrates by metalorganic molecular-beam epitaxy , 1998 .