Tin Dioxide Films Prepared by a Rapid Chemical Vapor Deposition Method

A rapid chemical vapor deposition method was studied for the preparation of tin dioxide films. The films were prepared under atmospheric-pressure on fused quartz and Si substrates at 200° to 600°C using bis(2,4-pentanedionato)tin as a source material. SnO 2 films obtained at 300° to 600°C had polycrystalline rutile structures, while the film deposited at 200°C was amorphous judging from the XRD patterns. The deposition rate of SnO 2 increased with increasing substrate temperature and vaporization temperature of the source material. The maximum deposition rate was 440 nm min −1 . The transmittance of SnO 2 , deposited at T s = 600°C, was more than 70% in the wavelength range 400–800 nm.